IndiumV3, Main, Repository, bibRecord, 009E03

Exciton hopping in InxGa1-xN multiple quantum wells

Identifieur interne : 009E03 ( Main/Repository ); précédent : 009E02; suivant : 009E04

Exciton hopping in InxGa1-xN multiple quantum wells

Auteurs : RBID : Pascal:05-0352911

Descripteurs français

Pascal (Inist)
- Exciton, Photoluminescence, Photoréflectance, Méthode Monte Carlo, Etat localisé, Thermalisation, Fluctuation, Elargissement raie, Gallium nitrure, Indium nitrure, Puits quantique multiple, Semiconducteur, Composé minéral, InxGa1-xN, 7867D, 7321F.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Excitons, Fluctuations, Gallium nitrides, Indium nitrides, Inorganic compounds, Line broadening, Localized states, Monte Carlo methods, Multiple quantum well, Photoluminescence, Photoreflectance, Semiconductor materials, Thermalization.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 009E75

Links to Exploration step

Pascal:05-0352911

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Exciton hopping in In<sub>x</sub>
Ga<sub>1-x</sub>
N multiple quantum wells</title>
<author><name sortKey="Kazlauskas, K" uniqKey="Kazlauskas K">K. Kazlauskas</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III</s1>
<s2>10222 Vilnius</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>10222 Vilnius</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tamulaitis, G" uniqKey="Tamulaitis G">G. Tamulaitis</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III</s1>
<s2>10222 Vilnius</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>10222 Vilnius</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Pobedinskas, P" uniqKey="Pobedinskas P">P. Pobedinskas</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III</s1>
<s2>10222 Vilnius</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>10222 Vilnius</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zukauskas, A" uniqKey="Zukauskas A">A. Zukauskas</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III</s1>
<s2>10222 Vilnius</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>10222 Vilnius</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Springis, M" uniqKey="Springis M">M. Springis</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Solid State Physics, University of Latvia, Kengaraga iela 8</s1>
<s2>1063 Riga</s2>
<s3>LVA</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Lettonie</country>
<wicri:noRegion>1063 Riga</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Huang, Chi Feng" uniqKey="Huang C">Chi-Feng Huang</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, 1 Roosevelt Road, Sec. 4</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Taipei</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Cheng, Yung Chen" uniqKey="Cheng Y">Yung-Chen Cheng</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, 1 Roosevelt Road, Sec. 4</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Taipei</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yang, C C" uniqKey="Yang C">C. C. Yang</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, 1 Roosevelt Road, Sec. 4</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Taipei</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">05-0352911</idno>
<date when="2005">2005</date>
<idno type="stanalyst">PASCAL 05-0352911 INIST</idno>
<idno type="RBID">Pascal:05-0352911</idno>
<idno type="wicri:Area/Main/Corpus">009E75</idno>
<idno type="wicri:Area/Main/Repository">009E03</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1098-0121</idno>
<title level="j" type="abbreviated">Phys. rev., B, condens. matter mater. phys.</title>
<title level="j" type="main">Physical review B. Condensed matter and materials physics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Excitons</term>
<term>Fluctuations</term>
<term>Gallium nitrides</term>
<term>Indium nitrides</term>
<term>Inorganic compounds</term>
<term>Line broadening</term>
<term>Localized states</term>
<term>Monte Carlo methods</term>
<term>Multiple quantum well</term>
<term>Photoluminescence</term>
<term>Photoreflectance</term>
<term>Semiconductor materials</term>
<term>Thermalization</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Exciton</term>
<term>Photoluminescence</term>
<term>Photoréflectance</term>
<term>Méthode Monte Carlo</term>
<term>Etat localisé</term>
<term>Thermalisation</term>
<term>Fluctuation</term>
<term>Elargissement raie</term>
<term>Gallium nitrure</term>
<term>Indium nitrure</term>
<term>Puits quantique multiple</term>
<term>Semiconducteur</term>
<term>Composé minéral</term>
<term>InxGa1-xN</term>
<term>7867D</term>
<term>7321F</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0>
</fA01>
<fA03 i2="1"><s0>Phys. rev., B, condens. matter mater. phys.</s0>
</fA03>
<fA05><s2>71</s2>
</fA05>
<fA06><s2>8</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Exciton hopping in In<sub>x</sub>
Ga<sub>1-x</sub>
N multiple quantum wells</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>KAZLAUSKAS (K.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>TAMULAITIS (G.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>POBEDINSKAS (P.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ZUKAUSKAS (A.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SPRINGIS (M.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>HUANG (Chi-Feng)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>CHENG (Yung-Chen)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>YANG (C. C.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III</s1>
<s2>10222 Vilnius</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institute of Solid State Physics, University of Latvia, Kengaraga iela 8</s1>
<s2>1063 Riga</s2>
<s3>LVA</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, 1 Roosevelt Road, Sec. 4</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA20><s2>085306.1-085306.5</s2>
</fA20>
<fA21><s1>2005</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>144B</s2>
<s5>354000127153150480</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2005 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>26 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>05-0352911</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physical review B. Condensed matter and materials physics</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC02 i1="01" i2="3"><s0>001B70H67D</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C21F</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Exciton</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Excitons</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Photoréflectance</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Photoreflectance</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Méthode Monte Carlo</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Monte Carlo methods</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Etat localisé</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Localized states</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Thermalisation</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Thermalization</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Fluctuation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Fluctuations</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Elargissement raie</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Line broadening</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Gallium nitrure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Gallium nitrides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium nitrides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Puits quantique multiple</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Multiple quantum well</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>48</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>InxGa1-xN</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>7867D</s0>
<s4>INC</s4>
<s5>60</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>7321F</s0>
<s4>INC</s4>
<s5>61</s5>
</fC03>
<fN21><s1>248</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 009E03 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 009E03 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:05-0352911
   |texte=   Exciton hopping in InxGa1-xN multiple quantum wells
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Exciton hopping in InxGa1-xN multiple quantum wells

Exciton hopping in InxGa1-xN multiple quantum wells

Descripteurs français

English descriptors

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri